| PART |
Description |
Maker |
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| M27C2001-55C1 M27C2001-10F1 M27C2001-10C1 M27C2001 |
256K X 8 UVPROM, 55 ns, CDIP32
256K X 8 UVPROM, 70 ns, CDIP32
256K X 8 OTPROM, 80 ns, PDIP32
256K X 8 OTPROM, 80 ns, PQCC32
2 MBIT (256KB X8) UV EPROM AND OTP ROM
|
STMICROELECTRONICS
ST Microelectronics
|
| M27C4002-15J1 M27C4002-80XJ6TR M27C4002-80XJ1X M27 |
256K X 16 UVPROM, 150 ns, CQCC44
256K X 16 UVPROM, 80 ns, CQCC44
256K X 16 UVPROM, 70 ns, CDIP40
256K X 16 OTPROM, 120 ns, PDIP40
256K X 16 OTPROM, 120 ns, PQCC44
256K X 16 OTPROM, 200 ns, PQCC44
256K X 16 UVPROM, 60 ns, CQCC44
|
STMICROELECTRONICS
|
| AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压（3.3V 256K × 18流水线脉冲同步静态内存）
3.3V 256K 】 16/18 pipeline burst synchronous SRAM
3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz
3.3V 256K × 16/18 pipeline burst synchronous SRAM
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor ...
|
| MX26C2000BQI-15 MX26C2000BTC-10 MX26C2000BTI-10 MX |
DIODE SCHOTTKY 15V 2X35A TO247AD
SWITCH PB SPST-NO .4VA SOLDERLUG
CONNECTOR ACCESSORY
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
IC HALF BRIDGE DRVR HS 2A 16-DIP 256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| AT49F4096-90TI AT49F4096-90TC AT49F4096-90RC AT49F |
Quadruple 2-Input Exclusive-OR Gates 14-SSOP -40 to 85
4 Megabit 256K x 16 5-volt Only CMOS Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44
Dual 16-Bit Binary Counters with 3-State Output Registers 20-TSSOP -40 to 85 256K X 16 FLASH 5V PROM, 120 ns, PDSO44
|
Atmel Corp.
Atmel, Corp.
|
| AS4C256K16FO |
5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| CY7C1006D-10VXI |
1-Mbit (256K x 4) Static RAM 256K X 4 STANDARD SRAM, 10 ns, PDSO28
|
Cypress Semiconductor, Corp.
|
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